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AUIRFR120Zauirfu120z hexfet ? power mosfet www.irf.com 1 automotive mosfet s d g d-pak AUIRFR120Z gds gate drain source d features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * descriptionspecifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance persilicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 100v r ds(on) typ. 150m ? max. 190m ? i d 8.7a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy(thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case CCC 4.28 r ja junction-to-ambient (pcb mount) CCC 50 c/w r ja junction-to-ambient CCC 110 20 18 see fig.12a, 12b, 15, 16 35 0.23 20 max. 8.7 6.1 35 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1n m) i-pak auirfu120z s d g s d g d pd - 96345 downloaded from: http:///

2 www.irf.com s d g notes through are on page 3 static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 100 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.084 CCC v/c r ds(on) static drain-to-source on-resistance CCC 150 190 m ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v gfs forward transconductance 16 CCC CCC s i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 200 na gate-to-source reverse leakage CCC CCC -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge CCC 6.9 10 q gs gate-to-source charge CCC 1.6 CCC nc q gd gate-to-drain ("miller") charge CCC 3.1 CCC t d(on) turn-on delay time CCC 8.3 CCC t r rise time CCC26CCC t d(off) turn-off delay time CCC 27 CCC ns t f fall time CCC23CCC l d internal drain inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l s internal source inductance CCC 7.5 CCC from package and center of die contact c iss input capacitance CCC 310 CCC c oss output capacitance CCC 41 CCC c rss reverse transfer capacitance CCC 24 CCC pf c oss output capacitance CCC 150 CCC c oss output capacitance CCC 26 CCC c oss eff. effective output capacitance CCC 57 CCC diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 8.7 (body diode) a i sm pulsed source current CCC CCC 35 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 24 36 ns q rr reverse recovery charge CCC 23 35 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld ) v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 80v, ? = 1.0mhz v gs = 0v, v ds = 0v to 80v v gs = 10v v dd = 50v i d = 5.2a r g = 53 ? t j = 25c, i s = 5.2a, v gs = 0v t j = 25c, i f = 5.2a, v dd = 50v di/dt = 100a/ s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 5.2a v ds = v gs , i d = 25a v ds = 100v, v gs = 0v v ds = 100v, v gs = 0v, t j = 125c mosfet symbol showing the integral reverse p-n junction diode. v ds = 25v, i d = 5.2a i d = 5.2a v ds = 80v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 20v v gs = -20v downloaded from: http:///

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repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 1.29mh r g = 25 ? , i as = 5.2a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994 qualification information ? d pak msl1 i-pak n/a qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (2000v) aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m1b (100v) ( per aec-q101-002) human body model class h0 (100v) (per aec-q101-001) downloaded from: http:///

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 4.5v

0 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 175c 4.5v

4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60s pulse width t j = 25c t j = 175c 02468 i d, drain-to-source current (a) 0 2 4 6 8 10 12 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380s pulse width downloaded from: http:///

www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 100 200 300 400 500 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 024681 0 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v vds= 50v vds= 20v i d = 5.2a for test circuit see figure 13 0.0 0.5 1.0 1.5 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec downloaded from: http:///

6 www.irf.com 1e-006 1e-005 0.0001 0.001 0.01 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t j , junction temperature (c) 0 2 4 6 8 10 i d , d r a i n c u r r e n t ( a ) ri (c/w) i (sec) 0.33747 0.0000531.793 0.000125 2.150 0.000474 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.2a v gs = 10v downloaded from: http:///

www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - !"$ fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.9a 1.2 bottom 5.2a -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 2.0 3.0 4.0 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a downloaded from: http:///

8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 tav (sec) 0.01 0.1 1 10 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 4 8 12 16 20 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 5.2a downloaded from: http:///

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for n-channel hexfet power mosfets ? ! ? " ? #$! %& p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period +
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v ds 90%10% v gs t d(on) t r t d(off) t f ' "12 1 3 '. 0.1 % ' + - '' fig 18a. switching time test circuit fig 18b. switching time waveforms downloaded from: http:///

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch downloaded from: http:///

www.irf.com 13 ordering information base part package type complete part number form quantity AUIRFR120Z dpak tube 75 AUIRFR120Z tape and reel 2000 AUIRFR120Ztr tape and reel left 3000 AUIRFR120Ztrl tape and reel right 3000 AUIRFR120Ztrr auirfu120z ipak tube 75 auirfu120z standard pack downloaded from: http:///

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unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reservethe right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterati ons is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information ofthird parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product.ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulat ory requirements in connection with such use.ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au.buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

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